BEHAVIOUR OF PLASMA HYDROGENATED n-TYPE SILICON IN AQUEOUS FLUORIDE MEDIA

Authors

  • B BENHAOUA Université Mohammed Khider BO 145, , Biskra 7000
  • T KERBACHE Université Mentouri Constantine
  • A CHARI Université Mentouri Constantine
  • O GOROCHOV Laboratoire de Physique des Solides et de Cristallogenèse 01 places Aristide Briand 92195, Meudon Cedex

Keywords:

Porous silicon, Plasma hydrogenation, Electrochemistry, Dark current, capacitance-voltage, Surface morphology

Abstract

In this paper we have investigated the electrochemical behaviour, in the dark, of hydrogenated n-type silicon (n-Si (H)) as function of the plasma hydrogenation duration. We also study the pore size microstructures and the flat band potential Vfb. The results are compared with non-hydrogenated n-Si. To              explain this                results     we           had proposed electro- chemical reactionary mechanism, in which one of the species created by the plasma accelerates the oxidation of the silicon even at anodic polarisation.

This reaction is SiH2 + 2F-att ==> SiF2 + 2e- + H2 through it two electrons are injected in the conduction band. Then we had concluded that the mass loss and porous material formation is seriously affected by the hydrogenation.

Downloads

Download data is not yet available.

Author Biographies

B BENHAOUA, Université Mohammed Khider BO 145, , Biskra 7000

Département de Physique
Faculté des Sciences

T KERBACHE, Université Mentouri Constantine

Département de Physique
Faculté des Sciences

A CHARI, Université Mentouri Constantine

Département de Physique
Faculté des Sciences

References

- Canham L.T., Appl. Phys. Lett., 57 ( 1990), p.1046 .

- Lehmann V., Gősele U., Appl. Phys. Lett., 58 (1990), p.856.

- Memming R. and Schwandt G., Surf. Sci., 4 (1966), p.109.

- Turner D.R., J. Electrochem. Soc., 105, (1958), p.402.

- Ronga I., Bsiesy A., Gaspard F., Herino R., Ligeon M., Muller F. and Halimaoui A., J. Electrochem. Soc., 138 (1991) 1403.

- Ronga-Lefebvre I., Ph .D. Thesis, Université Joseph Fourier, Grenoble (1991).

- Searson P.C. and Zhang X.G., J. Electrochem. Soc., 138 (1990), p.2539.

- Chuang S.F. and Smith R.L., in Proceedings of the IEEE Workshop on Solid-State Sensors and Actuators, p. 151, Hilton Head, SC (1988).

- Arita Y., Sunohara Y., J. Electroch. Soc., 124 (1977), p.285.

- Unagami T. and Seki M., J. Electrochem. Soc., 125 (1978), p.1389.

- Chazalviel J.N., Etman M. and Ozanam F., J. Electroanal. Chem., 297 (1991), p.533.

- Belaidi A., Chazalviel J.N., Ozanam F., Gorochov O., Chari A., Foutouhi B. and Etman M., J. Electroanal. Chem., 444 (1998), p.55.

- Hassan H.H., Chazalviel J.N., Neuman-Spallart M., Ozanam F. and Etman M., J. Electroanal. Chem., 381 (1995), p.211.

- de Mierry P., Etchberry A., Risk R., Etchegoin and Aucouturier M., J. Electrochem. Soc., 141 (1994), p.1539.

- Allongue P., Henry de Villeneuve C., Pinsard L., and Bernard M.C., Appl. Phys. Lett., 67(1995), p.941.

- Parkhutik V. and Andrad Ibara E., Materials Science and Engineering B, 58 (1999), p.95.

- Schulz G. and Henzler M., Surf. Sci., 124 (1983), p.336.

- Miyazaki S., Schäer J., Ristein J. and Ley L., Appl. Phys. Lett., 68 (1996), p.1247.

- Halimaoui A., Oules C., and Bomchil G., Appl. Phys. Lett., 59 (1991), p.304.

- Ligeon M., Muller F., Herino R., Graspard F., Vial J.C., Romestain R., Billat S. and Bsiesy A., J. Appl. Phys., 74 (1993), p.1265.

- Herino R., Bomchil G., Barla K. and Bertrant C., J. Electrochem. Soc., 134, (1987), p.1994

- Narasimhan K.L., Banerjee S., Srivastava A.K. and Sardesai A., Appl. Phys. Lett., 62 (1993), p.331.

- Xie Y.H., Wilson W.L., Ross F.M., Mucha J.A., Fitzgerald E.A., Macaulay J.M. and Arris T.D., J.Appl.Phys.,71 (1992), p.2403.

- Zhang X.G., Colling S.D. and Smith R.L., J. Electrochem. Soc., 136 (1989), p.1561.

- Gerischer H. and Lubke M., Ber. Busenges, Phys. Chem., 91 (1987), p.394.

- Allongue P., Costa-Kieling V. and Gerischer H., J. Electrochem. Soc.,140 (1993), p.1018.

- Johnson N.M. and Herring C., Phys. Rev. B38 1581[1988]; Proc.15th Int. Conf. Defects in Semiconductors. 961[1989]; Proc.3rd Int. Conf. Shallow Imp. Semicond (1989).

- Tavendale A.J., Alexiev D. and Williams A.A., Appl. Phys .Lett., 47 (1985), p.317.

- Tavendale A.J., Williams A.A., Alexiev D. and Pearton S.J., Proc. Mater. Res. Soc. Symp. 59 (1986), p.469.

- Rappich J. and Lewerenz H.J., Thin Solid Films, 276 (1996), p.25.

- Rappich J. and Lewerenz H.J., J. Electrochem. Soc. , 142 (1995), p.1233.

- Madou M.J., Loo B.H., Frese K.W. and Roy Morisson S., Surf. Sci., 108 (1981), p.135.

- Tsuboi T., Sakka T. and Ogata Y.H., Solide State Commun., 109 (1999), p.195.

Published

2003-12-01

How to Cite

BENHAOUA, B., KERBACHE, T., CHARI, A., & GOROCHOV, O. (2003). BEHAVIOUR OF PLASMA HYDROGENATED n-TYPE SILICON IN AQUEOUS FLUORIDE MEDIA. Sciences & Technology. A, Exactes Sciences, (20), 51–56. Retrieved from https://revue.umc.edu.dz/a/article/view/1050

Issue

Section

Articles

Similar Articles

1 2 3 4 5 6 > >> 

You may also start an advanced similarity search for this article.