BEHAVIOUR OF PLASMA HYDROGENATED n-TYPE SILICON IN AQUEOUS FLUORIDE MEDIA

B BENHAOUA, T KERBACHE, A CHARI, O GOROCHOV

Résumé


In this paper we have investigated the electrochemical behaviour, in the dark, of hydrogenated n-type silicon (n-Si (H)) as function of the plasma hydrogenation duration. We also study the pore size microstructures and the flat band potential Vfb. The results are compared with non-hydrogenated n-Si. To              explain this                results     we           had proposed electro- chemical reactionary mechanism, in which one of the species created by the plasma accelerates the oxidation of the silicon even at anodic polarisation.

This reaction is SiH2 + 2F-att ==> SiF2 + 2e- + H2 through it two electrons are injected in the conduction band. Then we had concluded that the mass loss and porous material formation is seriously affected by the hydrogenation.


Mots-clés


Porous silicon ; Plasma hydrogenation ; Electrochemistry ; Dark current ; capacitance-voltage ; Surface morphology

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Références


- Canham L.T., Appl. Phys. Lett., 57 ( 1990), p.1046 .

- Lehmann V., Gősele U., Appl. Phys. Lett., 58 (1990), p.856.

- Memming R. and Schwandt G., Surf. Sci., 4 (1966), p.109.

- Turner D.R., J. Electrochem. Soc., 105, (1958), p.402.

- Ronga I., Bsiesy A., Gaspard F., Herino R., Ligeon M., Muller F. and Halimaoui A., J. Electrochem. Soc., 138 (1991) 1403.

- Ronga-Lefebvre I., Ph .D. Thesis, Université Joseph Fourier, Grenoble (1991).

- Searson P.C. and Zhang X.G., J. Electrochem. Soc., 138 (1990), p.2539.

- Chuang S.F. and Smith R.L., in Proceedings of the IEEE Workshop on Solid-State Sensors and Actuators, p. 151, Hilton Head, SC (1988).

- Arita Y., Sunohara Y., J. Electroch. Soc., 124 (1977), p.285.

- Unagami T. and Seki M., J. Electrochem. Soc., 125 (1978), p.1389.

- Chazalviel J.N., Etman M. and Ozanam F., J. Electroanal. Chem., 297 (1991), p.533.

- Belaidi A., Chazalviel J.N., Ozanam F., Gorochov O., Chari A., Foutouhi B. and Etman M., J. Electroanal. Chem., 444 (1998), p.55.

- Hassan H.H., Chazalviel J.N., Neuman-Spallart M., Ozanam F. and Etman M., J. Electroanal. Chem., 381 (1995), p.211.

- de Mierry P., Etchberry A., Risk R., Etchegoin and Aucouturier M., J. Electrochem. Soc., 141 (1994), p.1539.

- Allongue P., Henry de Villeneuve C., Pinsard L., and Bernard M.C., Appl. Phys. Lett., 67(1995), p.941.

- Parkhutik V. and Andrad Ibara E., Materials Science and Engineering B, 58 (1999), p.95.

- Schulz G. and Henzler M., Surf. Sci., 124 (1983), p.336.

- Miyazaki S., Schäer J., Ristein J. and Ley L., Appl. Phys. Lett., 68 (1996), p.1247.

- Halimaoui A., Oules C., and Bomchil G., Appl. Phys. Lett., 59 (1991), p.304.

- Ligeon M., Muller F., Herino R., Graspard F., Vial J.C., Romestain R., Billat S. and Bsiesy A., J. Appl. Phys., 74 (1993), p.1265.

- Herino R., Bomchil G., Barla K. and Bertrant C., J. Electrochem. Soc., 134, (1987), p.1994

- Narasimhan K.L., Banerjee S., Srivastava A.K. and Sardesai A., Appl. Phys. Lett., 62 (1993), p.331.

- Xie Y.H., Wilson W.L., Ross F.M., Mucha J.A., Fitzgerald E.A., Macaulay J.M. and Arris T.D., J.Appl.Phys.,71 (1992), p.2403.

- Zhang X.G., Colling S.D. and Smith R.L., J. Electrochem. Soc., 136 (1989), p.1561.

- Gerischer H. and Lubke M., Ber. Busenges, Phys. Chem., 91 (1987), p.394.

- Allongue P., Costa-Kieling V. and Gerischer H., J. Electrochem. Soc.,140 (1993), p.1018.

- Johnson N.M. and Herring C., Phys. Rev. B38 1581[1988]; Proc.15th Int. Conf. Defects in Semiconductors. 961[1989]; Proc.3rd Int. Conf. Shallow Imp. Semicond (1989).

- Tavendale A.J., Alexiev D. and Williams A.A., Appl. Phys .Lett., 47 (1985), p.317.

- Tavendale A.J., Williams A.A., Alexiev D. and Pearton S.J., Proc. Mater. Res. Soc. Symp. 59 (1986), p.469.

- Rappich J. and Lewerenz H.J., Thin Solid Films, 276 (1996), p.25.

- Rappich J. and Lewerenz H.J., J. Electrochem. Soc. , 142 (1995), p.1233.

- Madou M.J., Loo B.H., Frese K.W. and Roy Morisson S., Surf. Sci., 108 (1981), p.135.

- Tsuboi T., Sakka T. and Ogata Y.H., Solide State Commun., 109 (1999), p.195.


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