In this work, several phenomena related to carbon ion implantation, in amorphous silicon targets, were simulated. The investigation was performed using the TRIM code for a dose of 2.7 ×1017 C+cm-2 and an energy of 80 keV. Several quantities (the projected range (Rp), the standard deviation (ΔRp), etc.), characterizing the ion implantation, were obtained and compared with literature. On the other hand, the radiation damage (vacancies and phonons) in the substrates was also predicted. Concerning the redistribution of C+ ions, a good correlation between the simulation and literature has been revealed. However, we note that the investigation of the effect of some factors (annealing temperature, crystallographic orientation of the targets, etc.) on the studied phenomena is not possible by the TRIM code.


carbon; silicon; ion implantation; simulation

Texte intégral :



Jenkins, T. E., 1995, Semiconductor Science: Growth & characterization techniques, ed. Prentice Hall International (UK) Limited.

Hargue, C. J. Mc.,1987, The mechanical & tribological properties of ion implanted ceramics, in Ion beam modification of insulators, Beam modification of materials, ed. Elsevier, 2, Amsterdam, 223.

Katharria, Y. S., Singh, F., Kumar, P., Kanjilal, D., 2007, Nuclear Instruments and Methods in Physics Research B, 254, 78–82.

Müller, G., Krötz, Niemann, E., 1994, Sens. Actuators, A, 43, 259.

Morkoc, H., Strite, S., Gao, G. B., Lin, M. E., Sverdlov, B., Burns, M., 1994, Journal of Applied Physics, 76, 1336.

Philip G. 2002, Neudeck, Proc. IEEE 90, 1065.

Ziegler, J. F., Biersack, J. P., Littmark, U., 1985, The Stopping and Ranges of Ions in Solids, Pergamon Press, New York.

SRIM Program. Available from: .

P.N. Favennec, L’Implantation Ionique pour la Microélectronique et l’Optique, Collection Technique et Scientifique des Télécommunications, ENST, Ed. Masson, Paris, (1993).

S.M. Sze, Semiconductor Devices, Physics and Technology, AT and Bell Laboratories, Murray Hill, New Jerzey, 1985.

Ziegler, J. F., Biersack, J. P. , and Littmark, U., 1985, The Stopping and Range of Ions in Solids", by, Pergamon Press, New York.

Nastasi, M., Mayer, J. W., Hirvonen, J. K., 1996, Ion-Solid Interactions: Fundamentals and Applications, Cambridge University Press, New York, 146.

Nordling, C., Osterman, J., 1987 Physics Handbook, Studentlitteratur, Lund, 29.

Intarasiri, S., Kamwanna, T., Hallén, A., Yu, L. D., Janson, M. S., Thongleum, C., Possnert, G., Singkarat, S., 2006, Nuclear Instruments and Methods in Physics Research B, 249, 859–864

Winterbon, B., 1975, Ion Implantation Range and Energy Distributions, vol. 2, ed. Plenum Press.


  • Il n'y a présentement aucun renvoi.


Direction des Publications et de l'animation scientifique

Université des Frères Mentouri Constantine 1. Route Ain El-Bey. 25000. Algérie.