SIMULATION OF TRANSPORT PHENOMENA IN InP

Authors

  • A BELGHACHI University of Béchar

Keywords:

Transport phenomena, Monte Carlo, semiconductor, scattering.

Abstract

In the present work we report results of the simulation of transport phenomena in InP under uniform
electric fields in both transient and steady state regimes using semi-classical Ensemble Monte Carlo
method (EMC). The EMC algorithm used consists mainly of the simulation of an ensemble of carriers
and follows their history in parallel for a sequences of very short time intervals in three dimensional
momentum and real spaces. After each sampling interval, data (drift velocity, energy…) is collected for
each particle and the values are averaged. In our simulation an ensemble of 105 electrons are used. The
program was written with Fortran 90 language and run on IBM PC(PIII, 800GHz). The obtained results
are in good agreement with reported experimental data.

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Author Biography

A BELGHACHI, University of Béchar

Laboratory of Semiconductor
Devices Physics
Physics Department

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Published

2004-12-22

How to Cite

BELGHACHI, A. (2004). SIMULATION OF TRANSPORT PHENOMENA IN InP. Sciences & Technology. A, Exactes Sciences, (22), 27–32. Retrieved from https://revue.umc.edu.dz/a/article/view/202

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