EFFET DU GETTERING SUR LA LONGUEUR DE DIFFUSION DES PLAQUETTES DE SILICIUM SEMICRISTALLIN "SOPLIN"

Authors

  • A MOUHOUB Unité de Développement de la Technologie du Silicium (UDTS), Alger
  • B MAHMOUDI Unité de Développement de la Technologie du Silicium (UDTS), Alger

Keywords:

diffusion, gettering, longueur de diffusion, cellule solaire, silicium

Abstract

L’effet des diffusions du phosphore à haute température (T = 900°C) sur la longueur de diffusion (Ln) des plaquettes de silicium semicristallin SOPLIN (SOlidification by PLanar INterface) est déterminé par la mesure de la réponse spectrale de la photopile réalisée sur le matériau traité. L’influence de ces recuits sur les paramètres photovoltaïques est enregistrée dans les caractéristiques courant - tension sous éclairement simulé et la réponse spectrale.

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Author Biographies

A MOUHOUB, Unité de Développement de la Technologie du Silicium (UDTS), Alger

Laboratoire des Cellules Photovoltaïques

B MAHMOUDI, Unité de Développement de la Technologie du Silicium (UDTS), Alger

Laboratoire des Cellules Photovoltaïques

References

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Published

2003-06-01

How to Cite

MOUHOUB, A., & MAHMOUDI, B. (2003). EFFET DU GETTERING SUR LA LONGUEUR DE DIFFUSION DES PLAQUETTES DE SILICIUM SEMICRISTALLIN "SOPLIN". Sciences & Technology. A, Exactes Sciences, (19), 32–35. Retrieved from http://revue.umc.edu.dz/index.php/a/article/view/1829

Issue

N° 19 Juin 2003

Section

Articles

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