AbstractThe effect of bulk parameters (¬diffusion length (Ln), absorption coefficient (α) and acceptor concentration (Na)) on the cathodoluminescence intensity (ICl) of p type CdTe has been theoretically investigated. To do this a self-consistent calculation method of (ICl) has been used. The obtained results show that ICl decreases when Ln and α increase up to a certain excitation energy E0, and then begins to decrease. The maximum of the ICl = f(E0) curves shifts towards high energies.
N. L. Dmitruk, V. G. Litovchenko and G. H. Talat, The effect of the surface space charge region on the cathodoluminescence of semiconductors, Surface Science 72, (1978), 321-341.
W. Hergert, P. Reck, L. Pasemann, and J. Schreiber, Cathodoluminescence measurements using the scanning electron microscope for the determination of semiconductors parameters, Phys. Stat. Sol. a 101, (1987), 611-618.
C. H. Jacob Phang, K. L. Pey and S. H. Daniel Chan, A simulation Model for cathodoluminescence in the Scanning Electron Microscope, IEEE Transactions on Electron Devices 39, (1992),782-791.
D. B. Wittry, D. E. Kyser, Measurement of diffusion lengths in direct-gap semiconductors by electron beam excitation, J. Appl. Phys. 38, (1967), 375-382.
V.M. Leonov, A .G.Molchanov, Y.M. Popov and G.H. Talat, Investigation of the influence of surface annihilation of excitons on cathodoluminescence of CdS, Sov. Phys. Semicond. 10, (1976), 852-855.
T. I. Kovtunuva, N.N. Mikheev, A. N. Polyakov, and M. A. Stepovich, On the possibility of the mathematical modeling of the dependence of cathodoluminescence intensity on the energy of beam electrons with the use of the power series approximation in the problem of identifying the parameters of semiconductor meterials, J. Surf. Inv. X-ray, Sync. Neut. Tech. 4, (2010), 778-783.
F. Cléton, B. Sieber, R. A. Masut, L. Isnard, J. M. Bonard and J. D. Ganière, Photon recycling as the dominant process of luminescence generation in an electron beam excited n-InP epilayer grown on an n+-InP substrate, Semicond. Sci. Technol. 11, (1996), 726-734.
A. Djemel, R.J.Tarento, J. Castaing, Y. Marfaing and A. Nouiri, Study of electronic surface properties of GaAs in cathodoluminescence experiments, Phys. Stat. Sol. (a), 168, (1998) 425-430.
A. Djemel, A. Nouiri, S. Kouissa, and R. J. Tarrento, Cathodoluminescence calculation of GaAs. Surface analysis and comparison, Phys. Stat. Sol. (a), 191, (2002), 223-229.
D. Kenieche and K.Guergouri, Theoretical calculation of cathodoluminescence: Infuence of surface and bulk parameters on the depletion region of p-type CdTe, Mod. Phys. Lett. B , 30, (2016),1650057.
D. Kenieche and K. Guergouri, Theoretical Investigation of the Effect of the Surface Parameters on Cathodoluminescence Signal, J. Mat. Sci. Eng., 5, (2011), 473-477.
C. J. Wu, D.B. Wittry, Investigation of minority-carrier diffusion lengths by electron bombardment of schottky barriers, J. Appl. Phys., 49, (1978), 2827-2836.
K. Kanaya , S. Okayama, Penetration and energy-loss theory of electrons in solid targets, J. Phys. D : Appl. Phys., 5, (1972),43-58,.
W. Hergert and L. Pesemann, Theoretical study of the information depth of the cathodoluminescence signal in semiconductor materials, Phys. Stat. Sol. a 85, (1984), 641-648.
B. G. Yacobi et D. B. Holt, Cathodoluminescence Microscopy of Inorganic Solids, Ed. Pelenum Press, New York and London, (1990), 68.