BEHAVIOUR OF PLASMA HYDROGENATED n-TYPE SILICON IN AQUEOUS FLUORIDE MEDIA

Authors

  • B BENHAOUA Université Mohammed Khider BO 145, , Biskra 7000
  • T KERBACHE Université Mentouri Constantine
  • A CHARI Université Mentouri Constantine
  • O GOROCHOV Laboratoire de Physique des Solides et de Cristallogenèse 01 places Aristide Briand 92195, Meudon Cedex

Keywords:

Porous silicon, Plasma hydrogenation, Electrochemistry, Dark current, capacitance-voltage, Surface morphology

Abstract

In this paper we have investigated the electrochemical behaviour, in the dark, of hydrogenated n-type silicon (n-Si (H)) as function of the plasma hydrogenation duration. We also study the pore size microstructures and the flat band potential Vfb. The results are compared with non-hydrogenated n-Si. To              explain this                results     we           had proposed electro- chemical reactionary mechanism, in which one of the species created by the plasma accelerates the oxidation of the silicon even at anodic polarisation.

This reaction is SiH2 + 2F-att ==> SiF2 + 2e- + H2 through it two electrons are injected in the conduction band. Then we had concluded that the mass loss and porous material formation is seriously affected by the hydrogenation.

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Author Biographies

B BENHAOUA, Université Mohammed Khider BO 145, , Biskra 7000

Département de Physique
Faculté des Sciences

T KERBACHE, Université Mentouri Constantine

Département de Physique
Faculté des Sciences

A CHARI, Université Mentouri Constantine

Département de Physique
Faculté des Sciences

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Published

2003-12-01

How to Cite

BENHAOUA, B., KERBACHE, T., CHARI, A., & GOROCHOV, O. (2003). BEHAVIOUR OF PLASMA HYDROGENATED n-TYPE SILICON IN AQUEOUS FLUORIDE MEDIA. Sciences & Technology. A, Exactes Sciences, (20), 51–56. Retrieved from https://revue.umc.edu.dz/a/article/view/1050

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