Keywords
CdTe
self-consistent method
depletion region
excess carriers
low injection level
How to Cite
Abstract
The cathodoluminescence signal (Cl) has been investigated theoretically for p-type CdTe, in order to understand the effect of incident electron beam parameters (energy Eo, intensity Ip), at low injection level, on the excess carriers, the cathodoluminescence intensity (ICl) and the depletion region (Zd). To do this a self-consistent calculation method of (ICl) has been used.
The obtained results show that the excess concentrations of carriers have a maximum value near the surface and decrease when E0 increases. Regarding the depletion region we observe a decrease of the depth as a function of Ip for the relatively great values and an increase with increasing Eo. The curves ICl = f(E0) show a maximum in the energy interval of [30-40 keV] and a rapid decrease for high values of Ip. Additionally, we observe, in general, an increase of ICl with increasing Ip. Finally, we record a linear variation of the intensity Cl as a function of Ip, according to different energies E0.References
S.Hildebrandt, J. Schreiber,W. Hergert, H. Uniewski and H.S. leipner, Theoretical fundamentals and experimental materials and defect studies using quantitative scanning electron microscopy cathodoluminescence/ electron beam induced current on compound semiconductors ,Scann. Micr., 12, (1998), 535-552.
J. Schreiber and S. Vasnyov,The dynamic mode of highresolution cathodoluminescence microscopy, J. Phys.: Condens. Matter, 16, (2004), S75-S84.
Hui-fang Deng, and J. W. Steeds,Theoretical studies of minority carrier concentration profile and cathodoluminescence intensity in thin-film materials with different surface recombination velocities and constant excitation density, Semicond. Sci.Technol., 7, (1992), 125-134.
T. I. Kovtunuva, N.N. Mikheev, A. N. Polyakov, and M. A. Stepovich, On the possibility of the mathematical modeling of the dependence of cathodoluminescence intensity on the energy of beam electrons with the use of the power series approximation in the problem of identifying the parameters of semiconductor meterials, J. Surf. Inv. X-ray, Sync. Neut. Tech., 4, (2010),778-783.
F. Cléton, B. Sieber, R. A. Masut, L. Isnard, J. M. Bonard and J. D. Ganière, Photon recycling as the dominant process of luminescence generation in an electron beam excited n-InP epilayer grown on an n+-InP substrate, Semicond. Sci. Technol., 11, (1996), 726-734.
W. Hergert, P. Reck, L. Pasemann, and J. Schreiber, Cathodoluminescence measurements using the scanning electron microscope for the determination of semiconductors parameters, Phys. Stat. Sol. A, 101, (1987), 611-618,.
D. B. Wittry and D. F. Kyser, Surface recombination velocities and diffusion lengths in GaAs, J. Phys. Soc. Japan Suppl., 21, (1966), 312-316.
A. Djemel, R.J.Tarento, J. Castaing, Y. Marfaing and A. Nouiri, Study of electronic surface properties of GaAs in cathodoluminescence experiments, Phys. Stat. Sol. A, 168, (1998), 425-430.
C. J. Wu, D.B. Wittry, Investigation of minority-carrier diffusion lengths by electron bombardment of schottky barriers, J. Appl. Phys., 49, (1978), 2827-2836.
D. Kenieche and K. Guergouri, Theoretical Investigation of the Effect of the Surface Parameters on Cathodoluminescence Signal, J. Mat. Sci. Eng., 5, (2011), 473-
D. Kenieche and K.Guergouri, Theoretical calculation of cathodoluminescence: Infuence of surface and bulk parameters on the depletion region of p-type CdTe, Mod. Phys. Lett. B, 30, (2016),1650057.
K. Kanaya , S. Okayama, Penetration and energy-loss theory of electrons in solid targets, J. Phys. D : Appl. Phys., 5, (1972), 43-58.
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