SIMULATION OF TRANSPORT PHENOMENA IN InP
الكلمات المفتاحية:
Transport phenomena، Monte Carlo، semiconductor، scattering.الملخص
In the present work we report results of the simulation of transport phenomena in InP under uniform
electric fields in both transient and steady state regimes using semi-classical Ensemble Monte Carlo
method (EMC). The EMC algorithm used consists mainly of the simulation of an ensemble of carriers
and follows their history in parallel for a sequences of very short time intervals in three dimensional
momentum and real spaces. After each sampling interval, data (drift velocity, energy…) is collected for
each particle and the values are averaged. In our simulation an ensemble of 105 electrons are used. The
program was written with Fortran 90 language and run on IBM PC(PIII, 800GHz). The obtained results
are in good agreement with reported experimental data.
التنزيلات
المراجع
- Vasileska D. and Goodnick S.M., Materials Science and
Engineering, R38 (2002), p.181.
- Suchecka M., Materials Science Forum, Vol.297-298,
(1999), p.279.
- Jacoboni C. and Reggiani L., Review of Modern Physics,
Vol.55, N°3, (1983), p.645.
- Jacoboni C. and Lugli P., The Monte Carlo method for
semiconductor device simulation, Springer-Verlag/Wien,
(1989).
- Rees H.D., Phys. Lett. A, Vol. 26, (1968), p.416.
- Moglestue C., Monte Carlo simulation of semiconductor
devices, Chapman & Hall London, (1993).
- Vaissiére J.C., Elkssimi M. and Nougier J.P., Semicond. Sci.
Technol., 7, (1992), p.B308.
- Gasquet D., thèses de Doctorat d’Etat, Languedoc,
Montpellier, (1984).
- Fawcet W. and Hill G., Electron. Lett. 11, 4, (1975), pp.80-
- Gonzalez S.T., Velazquez J.E.P., Gutierrez P.M.C. and
Pardo D., Semicond. Sci. Technol., 7, 1, (1992), pp.31-36
- Rees H.D. and Gray K.W., Solid St. Electron. Devices 1,
(1976), p.1.
- Sze S.M., Physics of Semiconductor Devices, 2nd Edition,
Wiley-interscience Publication, (1981).
- Borodovskii P.A. and Osadchi V.M., Intervalley transfer of
Electron in AIII-BV Semiconductors, Inst. Of Semiconductor
Physics, Novosibirsk, (1987), p.170 (in Russian).
