SIMULATION OF CARBON ION PLANTATION IN SILICON TARGETS

Auteurs-es

  • R LABBANI Université Constantine 1
  • A BOUGUERRA Centre universitaire de Khenchela

Mots-clés :

carbon, silicon, ion implantation, simulation

Résumé

In this work, several phenomena related to carbon ion implantation, in amorphous silicon targets, were simulated. The investigation was performed using the TRIM code for a dose of 2.7 ×1017 C+cm-2 and an energy of 80 keV. Several quantities (the projected range (Rp), the standard deviation (ΔRp), etc.), characterizing the ion implantation, were obtained and compared with literature. On the other hand, the radiation damage (vacancies and phonons) in the substrates was also predicted. Concerning the redistribution of C+ ions, a good correlation between the simulation and literature has been revealed. However, we note that the investigation of the effect of some factors (annealing temperature, crystallographic orientation of the targets, etc.) on the studied phenomena is not possible by the TRIM code.

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Bibliographies de l'auteur-e

R LABBANI, Université Constantine 1

Laboratoire (LCMI)
Département. de Physique

A BOUGUERRA, Centre universitaire de Khenchela

Département SETI

Références

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Winterbon, B., 1975, Ion Implantation Range and Energy Distributions, vol. 2, ed. Plenum Press.

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Publié-e

2009-06-01

Comment citer

LABBANI, R., & BOUGUERRA, A. (2009). SIMULATION OF CARBON ION PLANTATION IN SILICON TARGETS. Sciences & Technologie. A, Sciences Exactes, (29), 55–60. Consulté à l’adresse https://revue.umc.edu.dz/a/article/view/37

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