CRYSTALLIZATION OF THIN AMORPHOUS SILICON LAYERS BY VARIOUS LASERS

Authors

  • N BOUKHEIT .Université Constantine 1
  • K MIROUH Université Constantine 1
  • A KARAALI Université Constantine 1

Keywords:

Amorphos silicon, Thin films, Ruby- YAG-CO2, TEM, RBS, Cristallisation

Abstract

Pulsed ruby, pulsed and scanned YAG, and CO2 lasers have been used to crystallize thin C.V.D. deposited amorphous undoped silicon layers. Substrates are singlr crystal Si (100) or amorphous SiO2. 

The annealed layers have been investigated by RBS and TEM, using both plan viewed and cross - sectional samples. The roles played by the nature of the substrate and by the large amount of nitrogen in the deposited layers are studied. The major observations made during these investigations are qualitatively discussed

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Author Biographies

N BOUKHEIT, .Université Constantine 1

Laboratoire des Propriétés Thermodynamiques et traitements de Surface des Matériaux

K MIROUH, Université Constantine 1

Laboratoire des Couches Minceset Interfaces, épartement de Physique

A KARAALI, Université Constantine 1

Laboratoire des Propriétés Thermodynamiques et traitements de Surface des Matériaux

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Published

2007-12-01

How to Cite

BOUKHEIT, N., MIROUH, K., & KARAALI, A. (2007). CRYSTALLIZATION OF THIN AMORPHOUS SILICON LAYERS BY VARIOUS LASERS. Sciences & Technology. A, Exactes Sciences, (26), 27–32. Retrieved from https://revue.umc.edu.dz/a/article/view/137

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