A MONTÉ CARLO MODEL FOR SIMULATING THE NITROGEN DIFFUSION EFFECT INTO B-LPCVD-NIDOS POLYCRYSTALLINE THIN FILMS
Mots-clés :
monte carlo simulation, LPCVD, Boron Implantation, Polycritalline siliconRésumé
The principal objective of our current work, is to study the influence of different treatment from surface which makes it possible to improve the properties of materials by technique of beam of ions (diffusion – implantation), on the distribution of the particles in a semiconductor the prone polycrystalline Silicon of our study, largely used in micro-electronics. The interest of this study is related to the ceaseless requirements in industry for increasingly reduced, powerful materials and with the weakest possible cost price.
We thus have, makes a nitriding in gas phase during the phase of deposit LPCVD of polycrystalline Silicon, then one made an ionic implantation with the Bore ions. The results obtained, starting from a simulation based on the Monte Carlo method, although they are carried out with amounts much lower than the really introduced amounts, being given the limitation of the machine used, satisfied the predictions established at the beginning and encourage us to continue this study from the point of view of the use of this material in particular in varied fields.
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